Infineon IGP10N60TXKSA1 IGBT, 24 A 600 V, 3-Pin TO-220, Through Hole
- RS庫存編號:
- 258-0985
- 製造零件編號:
- IGP10N60TXKSA1
- 製造商:
- Infineon
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HK$26.10
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單位 | 每單位 | 每包* |
|---|---|---|
| 2 - 8 | HK$13.05 | HK$26.10 |
| 10 - 18 | HK$11.75 | HK$23.50 |
| 20 - 28 | HK$11.05 | HK$22.10 |
| 30 - 38 | HK$9.45 | HK$18.90 |
| 40 + | HK$8.85 | HK$17.70 |
* 參考價格
- RS庫存編號:
- 258-0985
- 製造零件編號:
- IGP10N60TXKSA1
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Maximum Continuous Collector Current Ic | 24A | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 600V | |
| Maximum Power Dissipation Pd | 110W | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Emitter Voltage VGEO | ±20 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.5V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | JEDEC1 | |
| Series | TRENCHSTOPTM | |
| Height | 4.57mm | |
| Width | 10.36 mm | |
| Length | 29.95mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Maximum Continuous Collector Current Ic 24A | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 600V | ||
Maximum Power Dissipation Pd 110W | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Emitter Voltage VGEO ±20 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.5V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals JEDEC1 | ||
Series TRENCHSTOPTM | ||
Height 4.57mm | ||
Width 10.36 mm | ||
Length 29.95mm | ||
Automotive Standard No | ||
The Infineon Hard-switching 600 V, 10 A single TRENCHSTOP IGBT3 in a TO220 package, leads to significant improvement of static as well as dynamic performance of the device, due to combination of trench-cell and field stop concept. The combination of IGBT with soft recovery emitter controlled diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses.
High ruggedness, temperature stable behaviour
Low EMI emissions
Low gate charge
Very tight parameter distribution
相关链接
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