- RS庫存編號:
- 686-8341
- 製造零件編號:
- STGB10NB37LZT4
- 製造商:
- STMicroelectronics
當前暫無庫存,可於2024/8/7發貨,3 工作日送達。
已增加
單價 个(每托盘 2 )
HK$25.985
單位 | Per unit | Per Pack* |
2 - 248 | HK$25.985 | HK$51.97 |
250 - 498 | HK$25.33 | HK$50.66 |
500 + | HK$24.945 | HK$49.89 |
* 參考價格 |
- RS庫存編號:
- 686-8341
- 製造零件編號:
- STGB10NB37LZT4
- 製造商:
- STMicroelectronics
法例與合規
產品詳細資訊
IGBT Discretes, STMicroelectronics
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
規格
Attribute | Value |
---|---|
Maximum Continuous Collector Current | 20 A |
Maximum Collector Emitter Voltage | 375 V |
Maximum Gate Emitter Voltage | 12V |
Package Type | D2PAK (TO-263) |
Mounting Type | Surface Mount |
Channel Type | N |
Pin Count | 3 |
Transistor Configuration | Single |
Dimensions | 10.4 x 9.35 x 4.6mm |
Minimum Operating Temperature | -65 °C |
Maximum Operating Temperature | +175 °C |