STMicroelectronics STGB10NB37LZT4 IGBT, 20 A 375 V, 3-Pin D2PAK (TO-263)

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IGBT Discretes, STMicroelectronics

IGBT Discretes & Modules, STMicroelectronics

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

規格
Attribute Value
Maximum Continuous Collector Current 20 A
Maximum Collector Emitter Voltage 375 V
Maximum Gate Emitter Voltage 12V
Package Type D2PAK (TO-263)
Mounting Type Surface Mount
Channel Type N
Pin Count 3
Transistor Configuration Single
Length 10.4mm
Width 9.35mm
Height 4.6mm
Dimensions 10.4 x 9.35 x 4.6mm
Maximum Operating Temperature +175 °C
Minimum Operating Temperature -65 °C
696 現貨庫存,可於3工作日發貨。
單價 /個 (每包:2個)
HK$ 33.115
(不含稅)
單位
Per unit
Per Pack*
2 - 8
HK$33.115
HK$66.23
10 - 18
HK$31.175
HK$62.35
20 - 38
HK$29.695
HK$59.39
40 - 98
HK$26.695
HK$53.39
100 +
HK$24.28
HK$48.56
* 參考價格
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