Toshiba GT40QR21(STA1,E,D IGBT, 40 A 1200 V, 3-Pin SC-65, Through Hole
- RS庫存編號:
- 756-0540
- 製造零件編號:
- GT40QR21(STA1,E,D
- 製造商:
- Toshiba
現貨庫存，可於3工作日發貨。
已增加
單價 个
HK$27.62
| 單位 | Per unit |
| 1 - 24 | HK$27.62 |
| 25 - 99 | HK$26.80 |
| 100 - 249 | HK$25.98 |
| 250 - 499 | HK$25.42 |
| 500 + | HK$24.86 |
- RS庫存編號:
- 756-0540
- 製造零件編號:
- GT40QR21(STA1,E,D
- 製造商:
- Toshiba
法例與合規
- COO (Country of Origin):
- JP
產品詳細資訊
IGBT Discretes, Toshiba
IGBT Discretes & Modules, Toshiba
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
規格
Attribute | Value |
|---|---|
| Maximum Continuous Collector Current | 40 A |
| Maximum Collector Emitter Voltage | 1200 V |
| Maximum Gate Emitter Voltage | ±25V |
| Maximum Power Dissipation | 230 W |
| Package Type | SC-65 |
| Mounting Type | Through Hole |
| Channel Type | N |
| Pin Count | 3 |
| Switching Speed | 0.2µs |
| Transistor Configuration | Single |
| Dimensions | 20 x 15.5 x 4.5mm |
| Maximum Operating Temperature | +175 °C |