STMicroelectronics STGP20V60F IGBT, 40 A 600 V, 3-Pin TO-220

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IGBT Discretes, STMicroelectronics

IGBT Discretes & Modules, STMicroelectronics

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

規格
Attribute Value
Maximum Continuous Collector Current 40 A
Maximum Collector Emitter Voltage 600 V
Maximum Gate Emitter Voltage ±20V
Maximum Power Dissipation 167 W
Package Type TO-220
Mounting Type Through Hole
Channel Type N
Pin Count 3
Switching Speed 1MHz
Transistor Configuration Single
Length 10.4mm
Width 4.6mm
Height 15.75mm
Dimensions 10.4 x 4.6 x 15.75mm
Minimum Operating Temperature -55 °C
Maximum Operating Temperature +175 °C
480 現貨庫存,可於3工作日發貨。
單價 /個 (每包:5個)
HK$ 16.708
(不含稅)
單位
Per unit
Per Pack*
5 - 20
HK$16.708
HK$83.54
25 - 45
HK$13.452
HK$67.26
50 - 245
HK$10.832
HK$54.16
250 - 495
HK$9.392
HK$46.96
500 +
HK$7.812
HK$39.06
* 參考價格
包裝方式: