- RS庫存編號:
- 795-7041
- 製造零件編號:
- STGB10NC60HDT4
- 製造商:
- STMicroelectronics
925 現貨庫存,可於3工作日發貨。
已增加
單價 个(每托盘 5 )
HK$14.458
單位 | Per unit | Per Pack* |
5 - 245 | HK$14.458 | HK$72.29 |
250 - 495 | HK$14.096 | HK$70.48 |
500 + | HK$13.88 | HK$69.40 |
* 參考價格 |
- RS庫存編號:
- 795-7041
- 製造零件編號:
- STGB10NC60HDT4
- 製造商:
- STMicroelectronics
法例與合規
產品詳細資訊
IGBT Discretes, STMicroelectronics
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
規格
Attribute | Value |
---|---|
Maximum Continuous Collector Current | 10 A |
Maximum Collector Emitter Voltage | 600 V |
Maximum Gate Emitter Voltage | ±20V |
Maximum Power Dissipation | 65 W |
Package Type | D2PAK (TO-263) |
Mounting Type | Surface Mount |
Channel Type | N |
Pin Count | 3 |
Switching Speed | 1MHz |
Transistor Configuration | Single |
Dimensions | 10.4 x 9.35 x 4.6mm |
Minimum Operating Temperature | -55 °C |
Maximum Operating Temperature | +150 °C |