STMicroelectronics STGB10NC60HDT4, Type N-Channel IGBT, 20 A 600 V, 3-Pin TO-263, Surface

此圖片僅供參考，請參閲產品詳細資訊及規格

查看所有IGBTs
可享批量折扣

小計（1 包，共 5 件）*

HK$85.80

Add to Basket
選擇或輸入數量
有庫存
  • 加上 410 件從 2026年4月27日 起發貨
  • 加上 250 件從 2026年5月04日 起發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。

單位
每單位
每包*
5 - 245HK$17.16HK$85.80
250 - 495HK$16.76HK$83.80
500 +HK$16.48HK$82.40

* 參考價格

RS庫存編號:
795-7041
製造零件編號:
STGB10NC60HDT4
製造商:
STMicroelectronics
透過選取一個或多個屬性來查找類似產品。
選取全部

品牌

STMicroelectronics

Maximum Continuous Collector Current Ic

20A

Product Type

IGBT

Maximum Collector Emitter Voltage Vceo

600V

Maximum Power Dissipation Pd

65W

Package Type

TO-263

Mount Type

Surface

Channel Type

Type N

Pin Count

3

Switching Speed

1MHz

Maximum Collector Emitter Saturation Voltage VceSAT

2.5V

Minimum Operating Temperature

-55°C

Maximum Gate Emitter Voltage VGEO

±20 V

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Height

4.6mm

Length

10.4mm

Automotive Standard

No

IGBT Discretes, STMicroelectronics


IGBT Discretes & Modules, STMicroelectronics


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

相关链接