STMicroelectronics STGB10NC60HDT4, N-Channel IGBT, 20 A 600 V, 3-Pin TO-263, Surface
- RS庫存編號:
- 795-7041
- 製造零件編號:
- STGB10NC60HDT4
- 製造商:
- STMicroelectronics
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HK$92.70
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最後的 RS 庫存
- 405 件準備從其他地點送貨
- 最終 210 件從 2026年10月02日 起發貨
單位 | 每單位 | 每包* |
|---|---|---|
| 5 - 245 | HK$18.54 | HK$92.70 |
| 250 - 495 | HK$18.10 | HK$90.50 |
| 500 + | HK$17.80 | HK$89.00 |
* 參考價格
- RS庫存編號:
- 795-7041
- 製造零件編號:
- STGB10NC60HDT4
- 製造商:
- STMicroelectronics
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | STMicroelectronics | |
| Maximum Continuous Collector Current Ic | 20A | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 600V | |
| Maximum Power Dissipation Pd | 65W | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Channel Type | N | |
| Pin Count | 3 | |
| Switching Speed | 1MHz | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Emitter Voltage VGEO | ±20 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.5V | |
| Maximum Operating Temperature | 150°C | |
| Length | 10.4mm | |
| Width | 9.35mm | |
| Standards/Approvals | RoHS | |
| Height | 4.6mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 STMicroelectronics | ||
Maximum Continuous Collector Current Ic 20A | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 600V | ||
Maximum Power Dissipation Pd 65W | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Channel Type N | ||
Pin Count 3 | ||
Switching Speed 1MHz | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Emitter Voltage VGEO ±20 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2.5V | ||
Maximum Operating Temperature 150°C | ||
Length 10.4mm | ||
Width 9.35mm | ||
Standards/Approvals RoHS | ||
Height 4.6mm | ||
Automotive Standard No | ||
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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