onsemi HGTG30N60B3 IGBT, 60 A 600 V, 3-Pin TO-247, Through Hole
- RS庫存編號:
- 807-6664
- 製造零件編號:
- HGTG30N60B3
- 製造商:
- onsemi
此產品已停售
- RS庫存編號:
- 807-6664
- 製造零件編號:
- HGTG30N60B3
- 製造商:
- onsemi
法例與合規
產品詳細資訊
Discrete IGBTs, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
規格
Attribute | Value |
|---|---|
| Maximum Continuous Collector Current | 60 A |
| Maximum Collector Emitter Voltage | 600 V |
| Maximum Gate Emitter Voltage | ±20V |
| Maximum Power Dissipation | 208 W |
| Package Type | TO-247 |
| Mounting Type | Through Hole |
| Channel Type | N |
| Pin Count | 3 |
| Switching Speed | 1MHz |
| Transistor Configuration | Single |
| Dimensions | 15.87 x 4.82 x 20.82mm |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |