STMicroelectronics STGWT80H65DFB IGBT, 120 A 650 V, 3-Pin TO-3P

產品概覽和技術數據資料表
法例與合規
相容
產品詳細資訊

IGBT Discretes, STMicroelectronics

IGBT Discretes & Modules, STMicroelectronics

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

規格
Attribute Value
Maximum Continuous Collector Current 120 A
Maximum Collector Emitter Voltage 650 V
Maximum Gate Emitter Voltage ±20V
Maximum Power Dissipation 469 W
Package Type TO-3P
Mounting Type Through Hole
Channel Type N
Pin Count 3
Switching Speed 1MHz
Transistor Configuration Single
Length 15.8mm
Width 5mm
Height 20.1mm
Dimensions 15.8 x 5 x 20.1mm
Maximum Operating Temperature +175 °C
Minimum Operating Temperature -55 °C
152 現貨庫存,可於3工作日發貨。
單價 個
HK$ 58.42
(不含稅)
單位
Per unit
1 - 24
HK$58.42
25 - 99
HK$46.91
100 - 249
HK$45.58
250 - 499
HK$44.66
500 +
HK$40.64
包裝方式: