- RS庫存編號:
- 860-7454
- 製造零件編號:
- STGB15H60DF
- 製造商:
- STMicroelectronics
此產品已停售
- RS庫存編號:
- 860-7454
- 製造零件編號:
- STGB15H60DF
- 製造商:
- STMicroelectronics
法例與合規
產品詳細資訊
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
規格
Attribute | Value |
---|---|
Maximum Continuous Collector Current | 30 A |
Maximum Collector Emitter Voltage | 600 V |
Maximum Gate Emitter Voltage | ±20V |
Maximum Power Dissipation | 115 W |
Package Type | D2PAK (TO-263) |
Mounting Type | Surface Mount |
Channel Type | N |
Pin Count | 3 |
Transistor Configuration | Single |
Dimensions | 10.4 x 9.35 x 4.6mm |
Maximum Operating Temperature | +175 °C |
Minimum Operating Temperature | -55 °C |