- RS庫存編號:
- 862-9359
- 製造零件編號:
- ISL9V3040P3
- 製造商:
- Fairchild Semiconductor
10 現貨庫存,可於3工作日發貨。
已增加
單價 个(每托盘 5 )
HK$24.926
單位 | Per unit | Per Pack* |
5 - 10 | HK$24.926 | HK$124.63 |
15 - 20 | HK$24.302 | HK$121.51 |
25 + | HK$23.93 | HK$119.65 |
* 參考價格 |
- RS庫存編號:
- 862-9359
- 製造零件編號:
- ISL9V3040P3
- 製造商:
- Fairchild Semiconductor
法例與合規
產品詳細資訊
Discrete IGBTs, Fairchild Semiconductor
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
規格
Attribute | Value |
---|---|
Maximum Continuous Collector Current | 21 A |
Maximum Collector Emitter Voltage | 450 V |
Maximum Gate Emitter Voltage | ±14V |
Maximum Power Dissipation | 150 W |
Package Type | TO-220AB |
Mounting Type | Through Hole |
Channel Type | N |
Pin Count | 3 |
Transistor Configuration | Single |
Dimensions | 10.67 x 4.7 x 16.3mm |
Maximum Operating Temperature | +175 °C |
Minimum Operating Temperature | -40 °C |