onsemi CPH3910-TL-E, Junction Type Type N-Channel JFET-Channel N-Channel JFET, 25 V 50 mA, 3-Pin CPH
- RS庫存編號:
- 765-321
- 製造零件編號:
- CPH3910-TL-E
- 製造商:
- onsemi
N
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
查看批量定價選項小計（1 組，共 20 件）*
HK$71.02
訂單超過 HK$250.00 免費送貨
暫時缺貨
- 從 2026年7月06日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每膠帶* |
|---|---|---|
| 20 - 180 | HK$3.551 | HK$71.02 |
| 200 - 980 | HK$2.20 | HK$44.00 |
| 1000 - 1980 | HK$1.703 | HK$34.06 |
| 2000 + | HK$1.53 | HK$30.60 |
* 參考價格
- RS庫存編號:
- 765-321
- 製造零件編號:
- CPH3910-TL-E
- 製造商:
- onsemi
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | onsemi | |
| Channel Type | Type N | |
| Product Type | N-Channel JFET | |
| Sub Type | JFET | |
| Maximum Drain Source Voltage Vds | 25V | |
| Configuration | Junction Type | |
| Mount Type | Surface | |
| Package Type | CPH | |
| Pin Count | 3 | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 400mW | |
| Drain Source Current Ids | 50 mA | |
| Maximum Operating Temperature | 150°C | |
| Height | 0.9mm | |
| Width | 2.9mm | |
| Length | 2.8mm | |
| Series | CPH3 | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 onsemi | ||
Channel Type Type N | ||
Product Type N-Channel JFET | ||
Sub Type JFET | ||
Maximum Drain Source Voltage Vds 25V | ||
Configuration Junction Type | ||
Mount Type Surface | ||
Package Type CPH | ||
Pin Count 3 | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 400mW | ||
Drain Source Current Ids 50 mA | ||
Maximum Operating Temperature 150°C | ||
Height 0.9mm | ||
Width 2.9mm | ||
Length 2.8mm | ||
Series CPH3 | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The onsemi N-Channel JFET designed for applications requiring precision RF amplification and low noise operation. With a maximum drain-to-source voltage of 25V and a typical forward transfer admittance of 40 mS, this component excels in demanding environments. Ideal for AM tuner RF amplification and low noise applications, its ensures reliable performance across a range of temperatures and power levels. The device's low noise figure and high input capacitance make it suitable for critical communication signalling tasks, ensuring clarity and fidelity in signal transmission.
Features a maximum drain current of 50 mA for robust signal processing
Incorporates a gate current capability of 10 mA for versatile circuit integration
Offers a high input capacitance of 6.0 pF, enhancing signal stability
Provides a critical cutoff voltage range, ensuring efficient operation in diverse conditions
Designed as a Pb-free device, meeting modern environmental standards
Exhibits a low gate-to-drain breakdown voltage of −25V, promoting enhanced safety in usage
Delivers a significant noise figure of 2.1 dB, reducing unwanted noise interference
Optimised for AM tuner RF amplification, fostering superior audio quality in communications