onsemi CPH3910-TL-E, Junction Type N-Channel JFET-Channel N-Channel JFET, 25 V 50 mA, 3-Pin CPH
- RS庫存編號:
- 765-321
- 製造零件編號:
- CPH3910-TL-E
- 製造商:
- onsemi
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HK$73.80
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單位 | 每單位 | 每膠帶* |
|---|---|---|
| 20 - 180 | HK$3.69 | HK$73.80 |
| 200 - 980 | HK$2.285 | HK$45.70 |
| 1000 - 1980 | HK$1.77 | HK$35.40 |
| 2000 + | HK$1.59 | HK$31.80 |
* 參考價格
- RS庫存編號:
- 765-321
- 製造零件編號:
- CPH3910-TL-E
- 製造商:
- onsemi
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | onsemi | |
| Sub Type | JFET | |
| Product Type | N-Channel JFET | |
| Channel Type | N | |
| Maximum Drain Source Voltage Vds | 25V | |
| Configuration | Junction Type | |
| Mount Type | Surface | |
| Package Type | CPH | |
| Maximum Power Dissipation Pd | 400mW | |
| Drain Source Current Ids | 50 mA | |
| Pin Count | 3 | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Width | 2.9mm | |
| Height | 900μm | |
| Series | CPH3 | |
| Length | 2.8mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 onsemi | ||
Sub Type JFET | ||
Product Type N-Channel JFET | ||
Channel Type N | ||
Maximum Drain Source Voltage Vds 25V | ||
Configuration Junction Type | ||
Mount Type Surface | ||
Package Type CPH | ||
Maximum Power Dissipation Pd 400mW | ||
Drain Source Current Ids 50 mA | ||
Pin Count 3 | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Width 2.9mm | ||
Height 900μm | ||
Series CPH3 | ||
Length 2.8mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The onsemi N-Channel JFET designed for applications requiring precision RF amplification and low noise operation. With a maximum drain-to-source voltage of 25V and a typical forward transfer admittance of 40 mS, this component excels in demanding environments. Ideal for AM tuner RF amplification and low noise applications, its ensures reliable performance across a range of temperatures and power levels. The device's low noise figure and high input capacitance make it suitable for critical communication signalling tasks, ensuring clarity and fidelity in signal transmission.
Features a maximum drain current of 50 mA for robust signal processing
Incorporates a gate current capability of 10 mA for versatile circuit integration
Offers a high input capacitance of 6.0 pF, enhancing signal stability
Provides a critical cutoff voltage range, ensuring efficient operation in diverse conditions
Designed as a Pb-free device, meeting modern environmental standards
Exhibits a low gate-to-drain breakdown voltage of −25V, promoting enhanced safety in usage
Delivers a significant noise figure of 2.1 dB, reducing unwanted noise interference
Optimised for AM tuner RF amplification, fostering superior audio quality in communications
