Nexperia NSF060120D7A0 Type N-Channel MOSFET, 38.27 A, 1200 V Enhancement, 7-Pin TO-263 NSF060120D7A0J
- RS庫存編號:
- 219-446
- 製造零件編號:
- NSF060120D7A0J
- 製造商:
- Nexperia
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 組，共 1 件）*
HK$139.10
訂單超過 HK$250.00 免費送貨
有庫存
- 778 件準備從其他地點送貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
膠帶 | 每膠帶 |
|---|---|
| 1 - 9 | HK$139.10 |
| 10 - 99 | HK$125.10 |
| 100 + | HK$115.40 |
* 參考價格
- RS庫存編號:
- 219-446
- 製造零件編號:
- NSF060120D7A0J
- 製造商:
- Nexperia
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Nexperia | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 38.27A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | TO-263 | |
| Series | NSF060120D7A0 | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 60mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 22 V | |
| Typical Gate Charge Qg @ Vgs | 57nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 167W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| 選取全部 | ||
|---|---|---|
品牌 Nexperia | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 38.27A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type TO-263 | ||
Series NSF060120D7A0 | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 60mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 22 V | ||
Typical Gate Charge Qg @ Vgs 57nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 167W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
- COO (Country of Origin):
- CN
The Nexperia SiC Power MOSFET comes in a compact 7-pin TO-263 plastic package for surface mounting on PCBs. Its excellent RDS(on) temperature stability and fast switching speed make it ideal for high-power, high-voltage industrial applications, including electric vehicle charging infrastructure, photovoltaic inverters, and motor drives.
Fast reverse recovery
Fast switching speed
Temperature independent turn off switching losses
Very fast and robust intrinsic body diode
相关链接
- Nexperia NSF030120D7A0 Type N-Channel MOSFET 1200 V Enhancement, 7-Pin TO-263 NSF030120D7A0J
- ROHM Type N-Channel MOSFET 1200 V Enhancement, 7-Pin TO-263
- ROHM Type N-Channel MOSFET 1200 V Enhancement, 7-Pin TO-263
- ROHM Type N-Channel MOSFET 1200 V Enhancement, 7-Pin TO-263
- ROHM Type N-Channel MOSFET 1200 V Enhancement, 7-Pin TO-263
- ROHM Type N-Channel MOSFET 1200 V Enhancement, 7-Pin TO-263 SCT4036KW7TL
- ROHM Type N-Channel MOSFET 1200 V Enhancement, 7-Pin TO-263 SCT4018KW7TL
- ROHM Type N-Channel MOSFET 1200 V Enhancement, 7-Pin TO-263 SCT4062KW7TL