N-Channel MOSFET, 1.2 A, 30 V, 3-Pin SOT-23 Infineon IRLML2803TRPBF
- RS庫存編號:
- 302-022P
- 製造零件編號:
- IRLML2803TRPBF
- 製造商:
- Infineon
70 現貨庫存，可於3工作日發貨。
單價 个 (以每卷裝提供) Quantities below 150 on continuous strip
HK$2.38
| 單位 | Per unit |
| 750 - 1495 | HK$2.38 |
| 1500 + | HK$2.338 |
- RS庫存編號:
- 302-022P
- 製造零件編號:
- IRLML2803TRPBF
- 製造商:
- Infineon
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
N-Channel Power MOSFET 30V, Infineon
The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
規格
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 1.2 A |
| Maximum Drain Source Voltage | 30 V |
| Series | HEXFET |
| Package Type | SOT-23 |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 250 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 1V |
| Minimum Gate Threshold Voltage | 1V |
| Maximum Power Dissipation | 540 mW |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Length | 3.04mm |
| Maximum Operating Temperature | +150 °C |
| Number of Elements per Chip | 1 |
| Typical Gate Charge @ Vgs | 3.3 nC @ 10 V |
| Transistor Material | Si |
| Width | 1.4mm |
| Height | 1.02mm |
| Minimum Operating Temperature | -55 °C |