Infineon Trench Igbt 3 FB50R07W2E3_B23 Type P-Channel MOSFET Depletion EasyPIM FB50R07W2E3B23BOMA1

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RS庫存編號:
348-972
製造零件編號:
FB50R07W2E3B23BOMA1
製造商:
Infineon
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品牌

Infineon

Channel Type

Type P

Product Type

MOSFET

Package Type

EasyPIM

Series

FB50R07W2E3_B23

Mount Type

Screw

Channel Mode

Depletion

Maximum Power Dissipation Pd

20mW

Maximum Gate Source Voltage Vgs

±20 V

Minimum Operating Temperature

-40°C

Forward Voltage Vf

1.95V

Maximum Operating Temperature

150°C

Transistor Configuration

Trench Igbt 3

Standards/Approvals

IEC 60747, 60749, 60068

Automotive Standard

No

COO (Country of Origin):
DE
The Infineon EasyPIM 2B 650 V, 50 A Interleaved PFC Stage integrates a rectifier, two-channel PFC, and inverter stage all within one compact module, offering a space-saving solution for power applications. Designed with very low stray inductance, it ensures minimal power loss and improved switching efficiency. The High speed H5 technology enhances the PFC stage, delivering higher efficiency and faster response times. This module supports higher switching frequencies up to 50 kHz for the PFC stage, enabling better performance in demanding applications. The Trenchstop IGBT 3 and emitter-controlled 3 diodes further enhance reliability and operational efficiency.

Compact design with Easy 2B package

Best cost performance ratio leading to reduced system costs

Enables high frequency operation and reduced cooling requirements

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