Infineon IPF Type N-Channel Power Transistor, 207 A, 135 V Enhancement, 7-Pin PG-TO263-7 IPF031N13NM6ATMA1
- RS庫存編號:
- 349-405
- 製造零件編號:
- IPF031N13NM6ATMA1
- 製造商:
- Infineon
可享批量折扣
小計（1 包，共 2 件）*
HK$108.50
訂單超過 HK$250.00 免費送貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 2 - 18 | HK$54.25 | HK$108.50 |
| 20 - 198 | HK$48.85 | HK$97.70 |
| 200 - 998 | HK$45.05 | HK$90.10 |
| 1000 - 1998 | HK$41.80 | HK$83.60 |
| 2000 + | HK$37.40 | HK$74.80 |
* 參考價格
- RS庫存編號:
- 349-405
- 製造零件編號:
- IPF031N13NM6ATMA1
- 製造商:
- Infineon
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | Power Transistor | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 207A | |
| Maximum Drain Source Voltage Vds | 135V | |
| Package Type | PG-TO263-7 | |
| Series | IPF | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 3.1mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1V | |
| Maximum Power Dissipation Pd | 294W | |
| Typical Gate Charge Qg @ Vgs | 104nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | IEC61249-2-21, MSL1 J-STD-020, Pb-free lead plating, RoHS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type Power Transistor | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 207A | ||
Maximum Drain Source Voltage Vds 135V | ||
Package Type PG-TO263-7 | ||
Series IPF | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 3.1mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1V | ||
Maximum Power Dissipation Pd 294W | ||
Typical Gate Charge Qg @ Vgs 104nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals IEC61249-2-21, MSL1 J-STD-020, Pb-free lead plating, RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MY
The Infineon OptiMOS 6 Power Transistor, 120 V is an N-channel, normal level MOSFET designed for high efficiency power applications. It features very low on-resistance (RDS(on)), reducing conduction losses and improving overall efficiency. With an excellent gate charge x RDS(on) product (FOM), it offers superior switching performance. The device also has very low reverse recovery charge (Qrr), ensuring efficient operation.
Optimized for motor drives and battery powered applications
Pb free lead plating and RoHS compliant
Halogen free according to IEC61249-2-21
MSL 1 classified according to J-STD-020
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