Infineon IPP Type N-Channel Power Transistor, 136 A, 200 V Enhancement, 3-Pin PG-TO220-3 IPP069N20NM6AKSA1
- RS庫存編號:
- 349-410
- 製造零件編號:
- IPP069N20NM6AKSA1
- 製造商:
- Infineon
可享批量折扣
小計（1 件）*
HK$74.70
库存信息目前无法访问 - 请稍候查看
單位 | 每單位 |
|---|---|
| 1 - 9 | HK$74.70 |
| 10 - 99 | HK$67.30 |
| 100 - 499 | HK$62.00 |
| 500 - 999 | HK$57.50 |
| 1000 + | HK$51.60 |
* 參考價格
- RS庫存編號:
- 349-410
- 製造零件編號:
- IPP069N20NM6AKSA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | Type N | |
| Product Type | Power Transistor | |
| Maximum Continuous Drain Current Id | 136A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Series | IPP | |
| Package Type | PG-TO220-3 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 6.9mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 73nC | |
| Maximum Power Dissipation Pd | 300W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | IEC61249-2-21, RoHS, J-STD-020 | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type Type N | ||
Product Type Power Transistor | ||
Maximum Continuous Drain Current Id 136A | ||
Maximum Drain Source Voltage Vds 200V | ||
Series IPP | ||
Package Type PG-TO220-3 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 6.9mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 73nC | ||
Maximum Power Dissipation Pd 300W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals IEC61249-2-21, RoHS, J-STD-020 | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MY
The Infineon OptiMOS 6 Power Transistor, 200 V is an N-channel, normal level MOSFET designed to deliver high efficiency in power applications. Key features include very low on-resistance (RDS(on)), which minimizes conduction losses, and an excellent gate charge x RDS(on) product (FOM) for superior switching performance. It also boasts very low reverse recovery charge (Qrr), enhancing efficiency and reducing switching losses. The device is equipped with a high avalanche energy rating, making it suitable for demanding conditions, and can operate at a high temperature of 175°C, ensuring reliability even in harsh environments.
Pb free lead plating and RoHS compliant
Halogen free according to IEC61249-2-21
MSL 1 classified according to J-STD-020
相关链接
- Infineon IPP Type N-Channel Power Transistor 600 V Enhancement, 3-Pin PG-TO220-3 IPP60R180CM8XKSA1
- Infineon IPP Type N-Channel Power Transistor 135 V Enhancement, 3-Pin PG-TO220-3 IPP073N13NM6AKSA1
- Infineon IPP Type N-Channel Power Transistor 200 V Enhancement, 3-Pin PG-TO220-3 IPP339N20NM6AKSA1
- Infineon IPP Type N-Channel MOSFET 700 V Enhancement, 3-Pin PG-TO220-3
- Infineon IPP Type N-Channel MOSFET 600 V Enhancement, 3-Pin PG-TO220-3 IPP60R016CM8XKSA1
- Infineon IPP Type N-Channel MOSFET 600 V Enhancement, 3-Pin PG-TO220-3 IPP60R037CM8XKSA1
- Infineon IPP Type N-Channel MOSFET 700 V Enhancement, 3-Pin PG-TO220-3 IPP65R060CFD7XKSA1
- Infineon IPP65R190CFD7A Type N-Channel MOSFET 650 V Enhancement, 3-Pin PG-TO220-3