Infineon IPQC60 Type N-Channel MOSFET, 174 A, 600 V Enhancement, 22-Pin PG-HDSOP-22 IPQC60T010S7AXTMA1
- RS庫存編號:
- 351-946
- 製造零件編號:
- IPQC60T010S7AXTMA1
- 製造商:
- Infineon
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HK$298.20
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單位 | 每單位 |
|---|---|
| 1 - 9 | HK$298.20 |
| 10 - 99 | HK$268.40 |
| 100 + | HK$247.40 |
* 參考價格
- RS庫存編號:
- 351-946
- 製造零件編號:
- IPQC60T010S7AXTMA1
- 製造商:
- Infineon
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 174A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | IPQC60 | |
| Package Type | PG-HDSOP-22 | |
| Mount Type | Surface | |
| Pin Count | 22 | |
| Maximum Drain Source Resistance Rds | 0.01Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -40°C | |
| Forward Voltage Vf | 0.82V | |
| Maximum Power Dissipation Pd | 694W | |
| Typical Gate Charge Qg @ Vgs | 318nC | |
| Maximum Operating Temperature | 150°C | |
| Height | 2.35mm | |
| Length | 15.5mm | |
| Standards/Approvals | AEC Q101 | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 174A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series IPQC60 | ||
Package Type PG-HDSOP-22 | ||
Mount Type Surface | ||
Pin Count 22 | ||
Maximum Drain Source Resistance Rds 0.01Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -40°C | ||
Forward Voltage Vf 0.82V | ||
Maximum Power Dissipation Pd 694W | ||
Typical Gate Charge Qg @ Vgs 318nC | ||
Maximum Operating Temperature 150°C | ||
Height 2.35mm | ||
Length 15.5mm | ||
Standards/Approvals AEC Q101 | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- MY
The Infineon CoolMOS S7TA with embedded temperature sensor increases junction temperature sensing accuracy and robustness while enabling easy implementation and functional safety. The device is optimized for low-frequency and high-current switching applications. It is an ideal fit for solid-state relay, battery disconnect, and eFuses.
Minimized conduction losses
Increased system performances
Allowing more compact design over EMR
Lower TCO over prolonged time
Enabling higher power density designs
Reduction of external sensing elements
Best utilization of power transistor
相关链接
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