- RS庫存編號:
- 124-1664
- 製造零件編號:
- RFP70N06
- 製造商:
- onsemi
150 現貨庫存,可於3工作日發貨。
已增加
單價 毎管:50 个
HK$11.951
單位 | Per unit | Per Tube* |
50 - 50 | HK$11.951 | HK$597.55 |
100 - 150 | HK$11.691 | HK$584.55 |
200 + | HK$11.432 | HK$571.60 |
* 參考價格 |
- RS庫存編號:
- 124-1664
- 製造零件編號:
- RFP70N06
- 製造商:
- onsemi
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor
Enhancement Mode Field Effect Transistors (FET) are produced using Fairchilds proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
規格
Attribute | Value |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 70 A |
Maximum Drain Source Voltage | 60 V |
Package Type | TO-220AB |
Mounting Type | Through Hole |
Pin Count | 3 |
Maximum Drain Source Resistance | 14 mΩ |
Channel Mode | Enhancement |
Minimum Gate Threshold Voltage | 2V |
Maximum Power Dissipation | 150 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | -20 V, +20 V |
Length | 10.67mm |
Typical Gate Charge @ Vgs | 120 nC @ 20 V |
Transistor Material | Si |
Maximum Operating Temperature | +175 °C |
Width | 4.83mm |
Number of Elements per Chip | 1 |
Minimum Operating Temperature | -55 °C |
Height | 9.4mm |