IXYS GigaMOS Trench HiperFET Type N-Channel MOSFET, 360 A, 100 V Enhancement, 4-Pin SOT-227 IXFN360N10T
- RS庫存編號:
- 125-8041
- Distrelec 貨號:
- 302-53-370
- 製造零件編號:
- IXFN360N10T
- 製造商:
- IXYS
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可享批量折扣
查看批量定價選項小計（1 件）*
HK$229.70
訂單超過 HK$250.00 免費送貨
有庫存
- 81 件準備從其他地點送貨
- 加上 875 件從 2026年6月05日 起發貨
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單位 | 每單位 |
|---|---|
| 1 - 2 | HK$229.70 |
| 3 - 4 | HK$223.90 |
| 5 + | HK$220.50 |
* 參考價格
- RS庫存編號:
- 125-8041
- Distrelec 貨號:
- 302-53-370
- 製造零件編號:
- IXFN360N10T
- 製造商:
- IXYS
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | IXYS | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 360A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | GigaMOS Trench HiperFET | |
| Package Type | SOT-227 | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 2.6mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 830W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 525nC | |
| Maximum Operating Temperature | 175°C | |
| Height | 9.6mm | |
| Standards/Approvals | No | |
| Length | 38.23mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 IXYS | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 360A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series GigaMOS Trench HiperFET | ||
Package Type SOT-227 | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 2.6mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 830W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 525nC | ||
Maximum Operating Temperature 175°C | ||
Height 9.6mm | ||
Standards/Approvals No | ||
Length 38.23mm | ||
Automotive Standard No | ||
N-channel Power MOSFET, IXYS HiperFET™ GigaMOS™ Series
MOSFET Transistors, IXYS
A wide range of Advanced discrete Power MOSFET devices from IXYS
相关链接
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