N-Channel MOSFET, 45.5 A, 30 V, 8-Pin PowerPAK SO-8 Vishay SIRA88DP-T1-GE3
- RS庫存編號:
- 134-9696P
- 製造零件編號:
- SIRA88DP-T1-GE3
- 製造商:
- Vishay
可供預購。
單價 个 (以每卷裝提供) 連續帶的數量低於 150
HK$2.474
單位 | 每單位 |
|---|---|
| 750 - 1475 | HK$2.474 |
| 1500 + | HK$2.436 |
- RS庫存編號:
- 134-9696P
- 製造零件編號:
- SIRA88DP-T1-GE3
- 製造商:
- Vishay
法例與合規
產品詳細資訊
N-Channel MOSFET, TrenchFET Gen IV, Vishay Semiconductor
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, Vishay Semiconductor
規格
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 45.5 A |
| Maximum Drain Source Voltage | 30 V |
| Package Type | PowerPAK SO-8 |
| Series | TrenchFET |
| Mounting Type | Surface Mount |
| Pin Count | 8 |
| Maximum Drain Source Resistance | 10 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 2.4V |
| Minimum Gate Threshold Voltage | 1.1V |
| Maximum Power Dissipation | 25 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | +20 V |
| Typical Gate Charge @ Vgs | 16.8 nC @ 10 V |
| Length | 6.25mm |
| Maximum Operating Temperature | +150 °C |
| Number of Elements per Chip | 1 |
| Width | 5.26mm |
| Height | 1.12mm |
| Forward Diode Voltage | 1.1V |
| Minimum Operating Temperature | -55 °C |