SiC N-Channel MOSFET, 5 A, 1700 V, 3-Pin TO-247 Wolfspeed C2M1000170D

  • RS庫存編號 145-6660
  • 製造零件編號 C2M1000170D
  • 製造商 Wolfspeed
COO (Country of Origin): CN

Wolfspeed Silicon Carbide Power MOSFETs

Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency.

• Enhancement-mode N-channel SiC technology
• High Drain-Source breakdown voltages - up to 1200V
• Multiple devices are easy to parallel and simple to drive
• High speed switching with low on-resistance
• Latch-up resistant operation

MOSFET Transistors, Wolfspeed

Attribute Value
Channel Type N
Maximum Continuous Drain Current 5 A
Maximum Drain Source Voltage 1700 V
Package Type TO-247
Mounting Type Through Hole
Pin Count 3
Maximum Drain Source Resistance 1.4 Ω
Channel Mode Enhancement
Maximum Gate Threshold Voltage 3.1V
Minimum Gate Threshold Voltage 2.4V
Maximum Power Dissipation 69 W
Transistor Configuration Single
Maximum Gate Source Voltage -5 V, +20 V
Number of Elements per Chip 1
Transistor Material SiC
Length 16.13mm
Maximum Operating Temperature +150 °C
Typical Gate Charge @ Vgs 13 nC @ 20 V, 13 nC @ 5 V
Forward Diode Voltage 3.8V
Minimum Operating Temperature -55 °C
Width 5.21mm
Height 21.1mm
當前暫無庫存,可於2021/3/3發貨,3 工作日送達。
單價 毎管:30 個
HK$ 43.456
Per unit
Per Tube*
30 +
* 參考價格