BSS606NH6327XTSA1 N-Channel MOSFET, 3.2 A, 60 V OptiMOS 3, 4-Pin PG-SOT-89 Infineon

  • RS庫存編號 145-8766
  • 製造零件編號 BSS606NH6327XTSA1
  • 製造商 Infineon
COO (Country of Origin): MY

Infineon OptiMOS™3 Power MOSFETs, 60 to 80V

OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.

Fast switching MOSFET for SMPS
Optimized technology for DC/DC converters
Qualified according to JEDEC1) for target applications
N-channel, logic level
Excellent gate charge x R DS(on) product (FOM)
Very low on-resistance R DS(on)
Pb-free plating

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Attribute Value
Channel Type N
Maximum Continuous Drain Current 3.2 A
Maximum Drain Source Voltage 60 V
Package Type PG-SOT-89
Mounting Type Surface Mount
Pin Count 4
Maximum Drain Source Resistance 90 mΩ
Channel Mode Enhancement
Maximum Gate Threshold Voltage 2.3V
Minimum Gate Threshold Voltage 1.3V
Maximum Power Dissipation 1 W
Transistor Configuration Single
Maximum Gate Source Voltage -20 V, +20 V
Number of Elements per Chip 1
Width 2.5mm
Minimum Operating Temperature -55 °C
Length 4.5mm
Forward Diode Voltage 1.1V
Transistor Material Si
Height 1.5mm
Series OptiMOS 3
Maximum Operating Temperature +150 °C
Typical Gate Charge @ Vgs 3.7 nC @ 5 V
當前暫無庫存,可於2020/1/23發貨,3 工作日送達。
單價 個 (在毎卷:1000)
HK$ 1.40
Per unit
Per Reel*
1000 +
* 參考價格