Nexperia PMCM4401VNE Type N-Channel MOSFET, 6 A, 12 V Enhancement, 4-Pin WLCSP
- RS庫存編號:
- 153-2851
- 製造零件編號:
- PMCM4401VNEAZ
- 製造商:
- Nexperia
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 卷，共 9000 件）*
HK$14,076.00
訂單超過 HK$250.00 免費送貨
暫時缺貨
- 從 2026年12月04日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 9000 - 9000 | HK$1.564 | HK$14,076.00 |
| 18000 - 27000 | HK$1.533 | HK$13,797.00 |
| 36000 + | HK$1.487 | HK$13,383.00 |
* 參考價格
- RS庫存編號:
- 153-2851
- 製造零件編號:
- PMCM4401VNEAZ
- 製造商:
- Nexperia
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Nexperia | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 6A | |
| Maximum Drain Source Voltage Vds | 12V | |
| Series | PMCM4401VNE | |
| Package Type | WLCSP | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 120mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 6nC | |
| Maximum Power Dissipation Pd | 12.5W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Length | 0.81mm | |
| Standards/Approvals | No | |
| Height | 0.16mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Nexperia | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 6A | ||
Maximum Drain Source Voltage Vds 12V | ||
Series PMCM4401VNE | ||
Package Type WLCSP | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 120mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 6nC | ||
Maximum Power Dissipation Pd 12.5W | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Length 0.81mm | ||
Standards/Approvals No | ||
Height 0.16mm | ||
Automotive Standard No | ||
N-channel MOSFETs ≤ 20 V, Get the optimum switching solutions for your portable designs, Choose from a wide range of single and dual N-channel MOSFETs up to 20 V. Great reliability due to our trusted TrenchMOS and package technologies. Easy-to-use, our low voltage MOSFETs are designed specifically to meet the demands of portable applications with low drive voltages.
12V, N-channel Trench MOSFET, N-channel enhancement mode Field-Effect Transistor (FET) in a 4 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology.
Low threshold voltage
Ultra small package: 0.78 x 0.78 x 0.35 mm
Trench MOSFET technology
ElectroStatic Discharge (ESD) protection > 2 kV HBM
Relay driver
High-speed line driver
Low-side loadswitch
Switching circuits
相关链接
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