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MOSFETs
N-Channel MOSFET, 28 A, 100 V, 8-Pin PowerPAK 1212-8 Vishay SIS892ADN-T1-GE3
RS庫存編號:
165-6981
製造零件編號:
SIS892ADN-T1-GE3
製造商:
Vishay
此圖片僅供參考,請參閲產品詳細資訊及規格
查看所有MOSFETs
2750 現貨庫存,可於3工作日發貨。
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單位
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單價 个(每带 3000 )
HK$3.944
單位
每單位
每卷*
3000 - 3000
HK$3.944
HK$11,832.00
6000 - 9000
HK$3.865
HK$11,595.00
12000 +
HK$3.788
HK$11,364.00
* 參考價格
RS庫存編號:
165-6981
製造零件編號:
SIS892ADN-T1-GE3
製造商:
Vishay
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
規格
SiS892ADN, N-Channel 100V (Drain-Source) MOSFET Data Sheet
ESD Control Selection Guide V1
相容
符合聲明
N-Channel MOSFET, 100V to 150V, Vishay Semiconductor
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, Vishay Semiconductor
Attribute
Value
Channel Type
N
Maximum Continuous Drain Current
28 A
Maximum Drain Source Voltage
100 V
Package Type
PowerPAK 1212-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
47 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
52 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Width
3.4mm
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Length
3.4mm
Typical Gate Charge @ Vgs
12.8 nC @ 10 V
Height
1.12mm
Minimum Operating Temperature
-55 °C