N-Channel MOSFET, 28 A, 600 V, 3-Pin TO-3PN IXYS IXFQ28N60P3
- RS庫存編號:
- 168-4739
- 製造零件編號:
- IXFQ28N60P3
- 製造商:
- IXYS
當前暫無庫存，可於2024/12/30發貨，3 工作日送達。
已增加
單價 毎管：30 个
HK$38.105
| 單位 | Per unit | Per Tube* |
| 30 - 30 | HK$38.105 | HK$1,143.15 |
| 60 - 90 | HK$37.277 | HK$1,118.31 |
| 120 + | HK$36.448 | HK$1,093.44 |
| * 參考價格 | ||
- RS庫存編號:
- 168-4739
- 製造零件編號:
- IXFQ28N60P3
- 製造商:
- IXYS
法例與合規
- COO (Country of Origin):
- US
產品詳細資訊
N-channel Power MOSFET, IXYS HiperFET™ Polar3™ Series
A range of IXYS Polar3™ series N-channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™)
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
規格
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 28 A |
| Maximum Drain Source Voltage | 600 V |
| Series | HiperFET, Polar3 |
| Package Type | TO-3PN |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 260 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 5V |
| Maximum Power Dissipation | 695 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -30 V, +30 V |
| Width | 4.9mm |
| Length | 15.8mm |
| Transistor Material | Si |
| Maximum Operating Temperature | +150 °C |
| Number of Elements per Chip | 1 |
| Typical Gate Charge @ Vgs | 50 nC @ 10 V |
| Height | 20.3mm |
| Minimum Operating Temperature | -55 °C |