- RS庫存編號:
- 168-4790
- 製造零件編號:
- MMIX1F520N075T2
- 製造商:
- IXYS
當前暫無庫存,可於2024/11/18發貨,3 工作日送達。
已增加
單價 毎管:20 个
HK$151.421
單位 | Per unit | Per Tube* |
20 - 20 | HK$151.421 | HK$3,028.42 |
40 - 60 | HK$146.878 | HK$2,937.56 |
80 + | HK$142.472 | HK$2,849.44 |
* 參考價格 |
- RS庫存編號:
- 168-4790
- 製造零件編號:
- MMIX1F520N075T2
- 製造商:
- IXYS
法例與合規
產品詳細資訊
N-channel Power MOSFET, IXYS HiperFET™ GigaMOS™ Series
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
規格
Attribute | Value |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 500 A |
Maximum Drain Source Voltage | 75 V |
Package Type | SMPD |
Series | GigaMOS, HiperFET |
Mounting Type | Surface Mount |
Pin Count | 24 |
Maximum Drain Source Resistance | 1.6 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 5V |
Maximum Power Dissipation | 830 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | -30 V, +30 V |
Number of Elements per Chip | 1 |
Width | 23.25mm |
Length | 25.25mm |
Maximum Operating Temperature | +175 °C |
Transistor Material | Si |
Typical Gate Charge @ Vgs | 545 nC @ 10 V |
Forward Diode Voltage | 1.25V |
Minimum Operating Temperature | -55 °C |
Height | 5.7mm |