N-Channel MOSFET, 15.8 A, 600 V, 3-Pin TO-220SIS Toshiba TK16A60W,S4VX(M

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MOSFET Transistors, Toshiba

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	15.8 A
Maximum Drain Source Voltage	600 V
Package Type	TO-220SIS
Series	TK
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	190 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	3.7V
Maximum Power Dissipation	40 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-30 V, +30 V
Maximum Operating Temperature	+150 °C
Number of Elements per Chip	1
Width	4.5mm
Transistor Material	Si
Length	10mm
Typical Gate Charge @ Vgs	38 nC @ 10 V
Height	15mm