N-Channel MOSFET, 2.8 A, 55 V, 3-Pin SOT-223 Infineon IRLL014NTRPBF
- RS庫存編號:
- 168-8748
- 製造零件編號:
- IRLL014NTRPBF
- 製造商:
- Infineon
當前暫無庫存，可於2025/5/5發貨，3 工作日送達。
已增加
單價 个（每带 2500 ）
HK$1.931
| 單位 | Per unit | Per Reel* |
| 2500 - 10000 | HK$1.931 | HK$4,827.50 |
| 12500 + | HK$1.893 | HK$4,732.50 |
| * 參考價格 | ||
- RS庫存編號:
- 168-8748
- 製造零件編號:
- IRLL014NTRPBF
- 製造商:
- Infineon
法例與合規
- COO (Country of Origin):
- CN
產品詳細資訊
N-Channel Power MOSFET 55V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
規格
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 2.8 A |
| Maximum Drain Source Voltage | 55 V |
| Package Type | SOT-223 |
| Series | HEXFET |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 280 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 2V |
| Minimum Gate Threshold Voltage | 1V |
| Maximum Power Dissipation | 2.1 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -16 V, +16 V |
| Maximum Operating Temperature | +150 °C |
| Number of Elements per Chip | 1 |
| Width | 3.7mm |
| Typical Gate Charge @ Vgs | 9.5 nC @ 10 V |
| Transistor Material | Si |
| Length | 6.7mm |
| Minimum Operating Temperature | -55 °C |
| Height | 1.739mm |