- RS庫存編號:
- 171-1923
- 製造零件編號:
- IRF7424TRPBF
- 製造商:
- International Rectifier
當前暫無庫存,可於2025/5/9發貨,3 工作日送達。
已增加
單價 个(每托盘 10 )
HK$8.969
單位 | Per unit | Per Pack* |
10 - 990 | HK$8.969 | HK$89.69 |
1000 - 1990 | HK$8.744 | HK$87.44 |
2000 + | HK$8.61 | HK$86.10 |
* 參考價格 |
- RS庫存編號:
- 171-1923
- 製造零件編號:
- IRF7424TRPBF
- 製造商:
- International Rectifier
產品概覽和技術數據資料表
法例與合規
不適用
產品詳細資訊
P-Channel Power MOSFET 30V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
The Infineon IRF7424 is 30V single P-channel HEXFET power MOSFET in a SO-8 package. The SO-8 has been modified through a customized lead frame for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications.
RoHS compliant
Industry-leading quality
Industry-standard Pinout
P-channel MOSFET
Industry-leading quality
Industry-standard Pinout
P-channel MOSFET
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
規格
Attribute | Value |
---|---|
Channel Type | P |
Maximum Continuous Drain Current | 11 A |
Maximum Drain Source Voltage | 30 V |
Series | IRF7424PbF |
Package Type | SO-8 |
Mounting Type | Surface Mount |
Pin Count | 8 |
Maximum Drain Source Resistance | 22 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 2.5V |
Minimum Gate Threshold Voltage | 1V |
Maximum Power Dissipation | 2.5 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | 20 V |
Typical Gate Charge @ Vgs | 75 nC @ 10 V |
Number of Elements per Chip | 1 |
Width | 4mm |
Maximum Operating Temperature | +150 °C |
Length | 5mm |
Height | 1.5mm |
Minimum Operating Temperature | -55 °C |
Forward Diode Voltage | 1.2V |