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MOSFETs
N-Channel MOSFET, 136 A, 100 V, 3-Pin D2PAK Toshiba TK65G10N1
RS庫存編號:
171-2487
製造零件編號:
TK65G10N1
製造商:
Toshiba
查看所有MOSFETs
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單位
延期交貨
此產品暫時不接受預訂。
抱歉,此產品暫無現貨,目前也不接受預訂。
單價 个(每托盘 5 )
HK$22.582
單位
每單位
每包*
5 - 245
HK$22.582
HK$112.91
250 - 495
HK$22.018
HK$110.09
500 +
HK$21.68
HK$108.40
* 參考價格
包裝方式:
標準包裝
行業包裝
RS庫存編號:
171-2487
製造零件編號:
TK65G10N1
製造商:
Toshiba
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
規格
Datasheet
ESD Control Selection Guide V1
豁免
符合聲明
COO (Country of Origin):
CN
Low drain-source on-resistance: RDS(ON) = 3.8 mΩ (typ.) (VGS = 10 V)
Low leakage current: IDSS = 10 μA (max) (VDS = 100 V)
Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1.0 mA)
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
Attribute
Value
Channel Type
N
Maximum Continuous Drain Current
136 A
Maximum Drain Source Voltage
100 V
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
4.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
156 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Typical Gate Charge @ Vgs
81 nC @ 10 V
Width
10.27mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
10.35mm
Height
4.46mm
Forward Diode Voltage
1.2V