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MOSFETs
Dual N-Channel MOSFET, 180 mA, 20 V, 6-Pin SOT-563 Toshiba SSM6N35FE
RS庫存編號:
171-2510P
製造零件編號:
SSM6N35FE
製造商:
Toshiba
查看所有MOSFETs
100 現貨庫存,可於3工作日發貨。
Add to Basket
單位
添加到購物車
即時庫存查詢
添加到收藏夾
單價 个 (以每卷裝提供) 連續帶的數量低於 150
HK$1.133
單位
每單位
100 - 450
HK$1.133
500 - 950
HK$1.104
1000 +
HK$1.077
包裝方式:
標準包裝
行業包裝
RS庫存編號:
171-2510P
製造零件編號:
SSM6N35FE
製造商:
Toshiba
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
規格
Datasheet
ESD Control Selection Guide V1
相容
符合聲明
COO (Country of Origin):
TH
1.2-V drive
N-ch 2-in-1
Low ON-resistance: Ron = 20 Ω (max) (@VGS = 1.2 V)
Ron = 8 Ω (max) (@VGS = 1.5 V)
Ron = 4 Ω (max) (@VGS = 2.5 V)
Ron = 3 Ω (max) (@VGS = 4.0 V)
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
Attribute
Value
Channel Type
N
Maximum Continuous Drain Current
180 mA
Maximum Drain Source Voltage
20 V
Package Type
SOT-563
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
20 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
150 mW
Maximum Gate Source Voltage
±10 V
Length
1.2mm
Maximum Operating Temperature
+150 °C
Width
1.6mm
Number of Elements per Chip
2
Height
0.55mm