N-Channel MOSFET, 23 A, 60 V, 8-Pin SOP Taiwan Semi TSM120N06LCS RLG
- RS庫存編號:
- 171-3677
- 製造零件編號:
- TSM120N06LCS RLG
- 製造商:
- Taiwan Semiconductor
此產品已停售
- RS庫存編號:
- 171-3677
- 製造零件編號:
- TSM120N06LCS RLG
- 製造商:
- Taiwan Semiconductor
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
The Taiwan Semiconductor 30V, 55A, 8 pin, N-channel power MOSFET has single transistor configuration and enhancement channel mode. It is generally used in applications such as motor control for BLDC and battery power management.
Low RDS(ON) to minimize conductive losses
Logic level
Low gate charge for fast power switching
100% UIS and Rg tested
Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC
Halogen-free according to IEC 61249-2-21
Operating temperature ranges between -55 °C to +150 °C
40W max. power dissipation
Gate threshold voltage ranges between 1.2V-2.5V
Logic level
Low gate charge for fast power switching
100% UIS and Rg tested
Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC
Halogen-free according to IEC 61249-2-21
Operating temperature ranges between -55 °C to +150 °C
40W max. power dissipation
Gate threshold voltage ranges between 1.2V-2.5V
規格
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 23 A |
| Maximum Drain Source Voltage | 60 V |
| Package Type | SOP |
| Mounting Type | Surface Mount |
| Pin Count | 8 |
| Maximum Drain Source Resistance | 15 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 2.5V |
| Minimum Gate Threshold Voltage | 1.2V |
| Maximum Power Dissipation | 12.5 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | ±20 V |
| Width | 3.9mm |
| Number of Elements per Chip | 1 |
| Maximum Operating Temperature | +150 °C |
| Length | 4.85mm |
| Typical Gate Charge @ Vgs | 19 nC @ 4.5 V, 37 nC @ 10 V |
| Forward Diode Voltage | 1V |
| Height | 1.55mm |
| Minimum Operating Temperature | -55 °C |