N-Channel MOSFET, 4 A, 800 V, 3-Pin ITO-220 Taiwan Semi TSM4N80CI C0G
- RS庫存編號:
- 171-3719
- 製造零件編號:
- TSM4N80CI C0G
- 製造商:
- Taiwan Semiconductor
此產品已停售
- RS庫存編號:
- 171-3719
- 製造零件編號:
- TSM4N80CI C0G
- 製造商:
- Taiwan Semiconductor
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
The Taiwan Semiconductor 800V, 4A, 3. 0Ω, 3 pin, N-channel power MOSFET has single transistor configuration and enhancement channel mode. It is generally used in power Supply and lighting applications.
Low RDS(ON) 3Ω (Max.)
Low gate charge typical @ 20nC (Typ.)
Improve dV/dt capability
Operating temperature ranges between -55 °C to +150 °C
38.7W max. power dissipation
Gate threshold voltage ranges between 2V-4V
Low gate charge typical @ 20nC (Typ.)
Improve dV/dt capability
Operating temperature ranges between -55 °C to +150 °C
38.7W max. power dissipation
Gate threshold voltage ranges between 2V-4V
規格
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 4 A |
| Maximum Drain Source Voltage | 800 V |
| Package Type | ITO-220 |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 3 Ω |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 4V |
| Minimum Gate Threshold Voltage | 2V |
| Maximum Power Dissipation | 38.7 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | ±30 V |
| Typical Gate Charge @ Vgs | 20 nC @ 10 V |
| Length | 10mm |
| Maximum Operating Temperature | +150 °C |
| Width | 4.6mm |
| Number of Elements per Chip | 1 |
| Height | 15mm |
| Minimum Operating Temperature | -55 °C |
| Forward Diode Voltage | 1.5V |