ROHM QS8M51 Dual N/P-Channel MOSFET, 2 A, 1.5 A, 100 V, 8-Pin TSMT-8 QS8M51TR
- RS庫存編號:
- 172-0542
- 製造零件編號:
- QS8M51TR
- 製造商:
- ROHM
可享批量折扣
小計（1 包，共 25 件）*
HK$170.50
库存信息目前无法访问 - 请稍候查看
單位 | 每單位 | 每包* |
|---|---|---|
| 25 - 350 | HK$6.82 | HK$170.50 |
| 375 - 725 | HK$6.652 | HK$166.30 |
| 750 - 1475 | HK$6.484 | HK$162.10 |
| 1500 - 2475 | HK$6.324 | HK$158.10 |
| 2500 + | HK$6.164 | HK$154.10 |
* 參考價格
- RS庫存編號:
- 172-0542
- 製造零件編號:
- QS8M51TR
- 製造商:
- ROHM
規格
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | ROHM | |
| Channel Type | N, P | |
| Maximum Continuous Drain Current | 2 A, 1.5 A | |
| Maximum Drain Source Voltage | 100 V | |
| Series | QS8M51 | |
| Package Type | TSMT-8 | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 355 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.5 (N Channel) V, 2.5 (P Channel) V | |
| Minimum Gate Threshold Voltage | 1 (N Channel) V, 1 (P Channel) V | |
| Maximum Power Dissipation | 1.5 W | |
| Maximum Gate Source Voltage | ±20 V | |
| Maximum Operating Temperature | +150 °C | |
| Width | 2.5mm | |
| Number of Elements per Chip | 2 | |
| Length | 3.1mm | |
| Typical Gate Charge @ Vgs | 4.7 nC @ 5 V | |
| Forward Diode Voltage | 1.2V | |
| Height | 0.8mm | |
| 選取全部 | ||
|---|---|---|
品牌 ROHM | ||
Channel Type N, P | ||
Maximum Continuous Drain Current 2 A, 1.5 A | ||
Maximum Drain Source Voltage 100 V | ||
Series QS8M51 | ||
Package Type TSMT-8 | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 355 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.5 (N Channel) V, 2.5 (P Channel) V | ||
Minimum Gate Threshold Voltage 1 (N Channel) V, 1 (P Channel) V | ||
Maximum Power Dissipation 1.5 W | ||
Maximum Gate Source Voltage ±20 V | ||
Maximum Operating Temperature +150 °C | ||
Width 2.5mm | ||
Number of Elements per Chip 2 | ||
Length 3.1mm | ||
Typical Gate Charge @ Vgs 4.7 nC @ 5 V | ||
Forward Diode Voltage 1.2V | ||
Height 0.8mm | ||
- COO (Country of Origin):
- JP
Complex type MOSFETs(P+N) are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
4Ｖ-drive type
Nch+Nch Middle-power MOSFET
Fast Switching Speed
Small Surface Mount Package
Pb Free
Applications:
Coin Processing Machines
Portable Data Terminal
Digital Multimeter: Handy Type
Motor Control: Brushless DC
PLC (Programmable Logic Controller)
AC Servo
Network Attached Storage
DVR/DVS
Motor Control: Stepper Motor
Motor Control: Brushed DC
POS (Point Of Sales System)
Electric Bike
Embedded PC
Smart Meter
Surveillance Camera
X-ray Inspection Machine for Security
Surveillance Camera for Network
Intercom / Baby Monitor
Machine Vision Camera for Industrial
Fingerprint Authentication Device
GFCI(Ground Fault Circuit Interrupter)
Digital Multimeter: Bench Type
Display for EMS
Solar Power Inverters
Nch+Nch Middle-power MOSFET
Fast Switching Speed
Small Surface Mount Package
Pb Free
Applications:
Coin Processing Machines
Portable Data Terminal
Digital Multimeter: Handy Type
Motor Control: Brushless DC
PLC (Programmable Logic Controller)
AC Servo
Network Attached Storage
DVR/DVS
Motor Control: Stepper Motor
Motor Control: Brushed DC
POS (Point Of Sales System)
Electric Bike
Embedded PC
Smart Meter
Surveillance Camera
X-ray Inspection Machine for Security
Surveillance Camera for Network
Intercom / Baby Monitor
Machine Vision Camera for Industrial
Fingerprint Authentication Device
GFCI(Ground Fault Circuit Interrupter)
Digital Multimeter: Bench Type
Display for EMS
Solar Power Inverters