ROHM Type N-Channel MOSFET, 7 A, 600 V Enhancement, 3-Pin TO-220FM R6007ENX

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小計(1 包,共 10 件)*

HK$96.50

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最後的 RS 庫存
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每單位
每包*
10 - 40HK$9.65HK$96.50
50 - 90HK$9.41HK$94.10
100 - 190HK$9.18HK$91.80
200 - 390HK$8.94HK$89.40
400 +HK$8.72HK$87.20

* 參考價格

RS庫存編號:
172-0548
製造零件編號:
R6007ENX
製造商:
ROHM
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品牌

ROHM

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

7A

Maximum Drain Source Voltage Vds

600V

Package Type

TO-220FM

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

1.20Ω

Channel Mode

Enhancement

Maximum Power Dissipation Pd

40W

Maximum Gate Source Voltage Vgs

30V

Forward Voltage Vf

1.5V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

20nC

Maximum Operating Temperature

150°C

Width

4.8mm

Height

15.4mm

Length

10.3mm

Standards/Approvals

RoHS

COO (Country of Origin):
JP
Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.

Low on-resistance.

Fast switching speed.

Gate-source voltage (VGSS) guaranteed to be ±20V.

Drive circuits can be simple.

Parallel use is easy.

Pb-free lead plating

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