IXYS HiperFET, Polar3 Type N-Channel MOSFET, 192 A, 300 V Enhancement, 4-Pin SOT-227 IXFN210N30P3

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RS庫存編號:
177-5342
製造零件編號:
IXFN210N30P3
製造商:
IXYS
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品牌

IXYS

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

192A

Maximum Drain Source Voltage Vds

300V

Series

HiperFET, Polar3

Package Type

SOT-227

Mount Type

Panel

Pin Count

4

Maximum Drain Source Resistance Rds

14.5mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

1.5kW

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1.5V

Typical Gate Charge Qg @ Vgs

268nC

Maximum Operating Temperature

150°C

Height

9.6mm

Length

38.23mm

Standards/Approvals

No

Width

25.07 mm

Automotive Standard

No

N-channel Power MOSFET, IXYS HiperFET™ Polar3™ Series


A range of IXYS Polar3™ series N-channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™)

MOSFET Transistors, IXYS


A wide range of advanced discrete Power MOSFET devices from IXYS

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