P-Channel MOSFET, 100 A, 40 V, 3-Pin DPAK Vishay Siliconix SQD40061EL_GE3
- RS庫存編號:
- 178-3716
- 製造零件編號:
- SQD40061EL_GE3
- 製造商:
- Vishay Siliconix
可供預購。
已增加
單價 个（每带 2000 ）
HK$7.162
| 單位 | Per unit | Per Reel* |
| 2000 - 8000 | HK$7.162 | HK$14,324.00 |
| 10000 + | HK$7.018 | HK$14,036.00 |
| * 參考價格 | ||
- RS庫存編號:
- 178-3716
- 製造零件編號:
- SQD40061EL_GE3
- 製造商:
- Vishay Siliconix
產品概覽和技術數據資料表
法例與合規
不適用
- COO (Country of Origin):
- TW
產品詳細資訊
TrenchFET® power MOSFET
Package with low thermal resistance
Package with low thermal resistance
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
規格
Attribute | Value |
|---|---|
| Channel Type | P |
| Maximum Continuous Drain Current | 100 A |
| Maximum Drain Source Voltage | 40 V |
| Package Type | DPAK (TO-252) |
| Series | TrenchFET |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 9 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 2.5V |
| Minimum Gate Threshold Voltage | 1.5V |
| Maximum Power Dissipation | 107 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | ±20 V |
| Number of Elements per Chip | 1 |
| Width | 2.38mm |
| Length | 6.73mm |
| Transistor Material | Si |
| Maximum Operating Temperature | +175 °C |
| Typical Gate Charge @ Vgs | 185 nC @ 10 V |
| Forward Diode Voltage | 1.5V |
| Height | 6.22mm |
| Minimum Operating Temperature | -55 °C |