- RS庫存編號:
- 178-3717
- 製造零件編號:
- SQJ415EP-T1_GE3
- 製造商:
- Vishay Siliconix
當前暫無庫存,可於2024/11/26發貨,3 工作日送達。
已增加
單價 个(每带 3000 )
HK$3.455
單位 | Per unit | Per Reel* |
3000 - 12000 | HK$3.455 | HK$10,365.00 |
15000 + | HK$3.386 | HK$10,158.00 |
* 參考價格 |
- RS庫存編號:
- 178-3717
- 製造零件編號:
- SQJ415EP-T1_GE3
- 製造商:
- Vishay Siliconix
產品概覽和技術數據資料表
法例與合規
不適用
- COO (Country of Origin):
- CN
產品詳細資訊
TrenchFET® power MOSFET
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
規格
Attribute | Value |
---|---|
Channel Type | P |
Maximum Continuous Drain Current | 30 A |
Maximum Drain Source Voltage | 40 V |
Series | TrenchFET |
Package Type | PowerPAK SO-8L |
Mounting Type | Surface Mount |
Pin Count | 4 |
Maximum Drain Source Resistance | 20 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 2.5V |
Minimum Gate Threshold Voltage | 1.5V |
Maximum Power Dissipation | 45 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | ±20 V |
Number of Elements per Chip | 1 |
Width | 5mm |
Length | 5.99mm |
Maximum Operating Temperature | +175 °C |
Transistor Material | Si |
Typical Gate Charge @ Vgs | 63 nC @ 10 V |
Height | 1.07mm |
Minimum Operating Temperature | -55 °C |
Forward Diode Voltage | 1.2V |
Automotive Standard | AEC-Q101 |