Dual N/P-Channel-Channel MOSFET, 30 A, 40 V, 4-Pin PowerPak SO-8L Dual Vishay Siliconix SQJ504EP-T1_GE3
- RS庫存編號:
- 178-3720
- 製造零件編號:
- SQJ504EP-T1_GE3
- 製造商:
- Vishay Siliconix
此產品暫時不接受預訂。
抱歉，此產品暫無現貨，目前也不接受預訂。
已增加
單價 个（每带 3000 ）
HK$5.033
| 單位 | Per unit | Per Reel* |
| 3000 - 12000 | HK$5.033 | HK$15,099.00 |
| 15000 + | HK$4.932 | HK$14,796.00 |
| * 參考價格 | ||
- RS庫存編號:
- 178-3720
- 製造零件編號:
- SQJ504EP-T1_GE3
- 製造商:
- Vishay Siliconix
產品概覽和技術數據資料表
法例與合規
不適用
- COO (Country of Origin):
- CN
產品詳細資訊
TrenchFET® power MOSFET
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
規格
Attribute | Value |
|---|---|
| Channel Type | N, P |
| Maximum Continuous Drain Current | 30 A |
| Maximum Drain Source Voltage | 40 V |
| Series | TrenchFET |
| Package Type | PowerPak SO-8L Dual |
| Mounting Type | Surface Mount |
| Pin Count | 4 |
| Maximum Drain Source Resistance | 30 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 2.5V |
| Minimum Gate Threshold Voltage | 1.5V |
| Maximum Power Dissipation | 34 W, 34 W |
| Maximum Gate Source Voltage | ±20 V |
| Number of Elements per Chip | 2 |
| Width | 5mm |
| Typical Gate Charge @ Vgs | 18 (N Channel) nC @ 10 V, 56 (P Channel) nC @ 10 V |
| Transistor Material | Si |
| Length | 5.99mm |
| Maximum Operating Temperature | +175 °C |
| Minimum Operating Temperature | -55 °C |
| Automotive Standard | AEC-Q101 |
| Forward Diode Voltage | 1.2V |
| Height | 1.07mm |