P-Channel MOSFET, 9.4 A, 200 V, 4-Pin PowerPAK SO-8L Vishay Siliconix SQJ431AEP-T1_GE3
- RS庫存編號:
- 178-3873P
- 製造零件編號:
- SQJ431AEP-T1_GE3
- 製造商:
- Vishay Siliconix
8990 現貨庫存，可於3工作日發貨。
已增加
單價 个 (以每卷裝提供) Quantities below 150 on continuous strip
HK$9.812
| 單位 | Per unit |
| 750 - 1490 | HK$9.812 |
| 1500 + | HK$9.662 |
- RS庫存編號:
- 178-3873P
- 製造零件編號:
- SQJ431AEP-T1_GE3
- 製造商:
- Vishay Siliconix
產品概覽和技術數據資料表
法例與合規
不適用
- COO (Country of Origin):
- CN
產品詳細資訊
TrenchFET® power MOSFET
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
規格
Attribute | Value |
|---|---|
| Channel Type | P |
| Maximum Continuous Drain Current | 9.4 A |
| Maximum Drain Source Voltage | 200 V |
| Package Type | PowerPAK SO-8L |
| Series | TrenchFET |
| Mounting Type | Surface Mount |
| Pin Count | 4 |
| Maximum Drain Source Resistance | 760 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 3.5V |
| Minimum Gate Threshold Voltage | 2.5V |
| Maximum Power Dissipation | 68 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | ±20 V |
| Typical Gate Charge @ Vgs | 55 nC @ 10 V |
| Length | 5.99mm |
| Maximum Operating Temperature | +175 °C |
| Number of Elements per Chip | 1 |
| Width | 5mm |
| Transistor Material | Si |
| Forward Diode Voltage | 1.2V |
| Minimum Operating Temperature | -55 °C |
| Height | 1.07mm |
| Automotive Standard | AEC-Q101 |