Dual N/P-Channel-Channel MOSFET, 5.3 A,3.9 A, 60 V, 8-Pin SO-8 Vishay SI4559ADY-T1-E3

The Vishay surface mount dual channel (both P and N-channels) MOSFET is a new age product with a drain-source resistance of 58mohm at a gate-source voltage of 10V. It has a drain-source voltage of 60V. It has continuous drain currents of 5.3A and 3.9A. It has a maximum power rating of 3.4W. It has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality. It is applicable in CCFL inverters.

• Halogen free
• Lead (Pb) free
• Operating temperature ranges between -55°C and 150°C
• TrenchFET power MOSFET

• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007
• IEC 61249-2-21
• Rg tested
• UIS tested

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