onsemi Type N-Channel MOSFET, 44 A, 1200 V Enhancement, 3-Pin TO-247
- RS庫存編號:
- 189-0265
- 製造零件編號:
- NVHL080N120SC1
- 製造商:
- onsemi
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 管，共 30 件）*
HK$2,801.49
訂單超過 HK$250.00 免費送貨
暫時缺貨
- 從 2026年7月31日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每管* |
|---|---|---|
| 30 - 30 | HK$93.383 | HK$2,801.49 |
| 60 - 90 | HK$91.513 | HK$2,745.39 |
| 120 + | HK$89.687 | HK$2,690.61 |
* 參考價格
- RS庫存編號:
- 189-0265
- 製造零件編號:
- NVHL080N120SC1
- 製造商:
- onsemi
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 44A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 162mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 4V | |
| Typical Gate Charge Qg @ Vgs | 56nC | |
| Maximum Power Dissipation Pd | 348W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Height | 20.82mm | |
| Length | 15.87mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 44A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 162mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 4V | ||
Typical Gate Charge Qg @ Vgs 56nC | ||
Maximum Power Dissipation Pd 348W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Height 20.82mm | ||
Length 15.87mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 80 mohm, 1200 V, M1, TO247−3
Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.
1200V rated
Max RDS(on) = 110mΩ at Vgs = 20V, Id = 20A
High Speed Switching and Low Capacitance
Devices are Pb-Free
Applications
PFC
OBC
End Products
Automotive DC/DC converter for EV/PHEV
Automotive On Board Charger
Automotive Auxiliary Motor Drive
相关链接
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