SiC N-Channel MOSFET, 11 A, 900 V, 7-Pin D2PAK Wolfspeed C3M0280090J

RS庫存編號:: 192-3509
製造零件編號:: C3M0280090J
製造商:: Wolfspeed

SiC N-Channel MOSFET, 11 A, 900 V, 7-Pin D2PAK Wolfspeed C3M0280090J

2750 現貨庫存，可於3工作日發貨。

單價个（每托盘 2 ）

HK$53.455

單位	Per unit	Per Pack*
2 - 12	HK$53.455	HK$106.91
14 +	HK$52.51	HK$105.02
* 參考價格

RS庫存編號:: 192-3509
製造零件編號:: C3M0280090J
製造商:: Wolfspeed

產品概覽和技術數據資料表

法例與合規

COO (Country of Origin):: CN

產品詳細資訊

Wolfspeed introduces its latest breakthrough in SiC power device technology: the industry’s first 900-V MOSFET platform. Optimized for high-frequency power electronics applications, including renewable-energy inverters, electric-vehicle charging systems, and three-phase industrial power supplies, the new 900-V platform enables smaller and higher-efficiency next-generation power conversion systems at cost parity with silicon-based solutions.

New low-impedance package with driver source
High-speed switching with low capacitances
High blocking voltage with low RDS(on)
Avalanche ruggedness
Fast intrinsic diode with low reverse recovery (Qrr)
Easy to parallel and simple to drive

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

規格

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	11 A
Maximum Drain Source Voltage	900 V
Package Type	TO-263-7
Mounting Type	Surface Mount
Pin Count	7
Maximum Drain Source Resistance	280 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	3.5V
Minimum Gate Threshold Voltage	1.8V
Maximum Power Dissipation	50 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-8 V, 18 V
Transistor Material	SiC
Length	10.23mm
Typical Gate Charge @ Vgs	9.5 nC @ 4/15V
Maximum Operating Temperature	+150 °C
Number of Elements per Chip	1
Width	9.12mm
Minimum Operating Temperature	-55 °C
Height	4.57mm