Vishay E Type N-Channel MOSFET, 5 A, 850 V Enhancement, 3-Pin TO-251 SIHU6N80AE-GE3
- RS庫存編號:
- 200-6868
- 製造零件編號:
- SIHU6N80AE-GE3
- 製造商:
- Vishay
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 卷，共 3000 件）*
HK$18,405.00
訂單超過 HK$250.00 免費送貨
暫時缺貨
- 從 2026年10月05日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 3000 - 3000 | HK$6.135 | HK$18,405.00 |
| 6000 - 9000 | HK$6.013 | HK$18,039.00 |
| 12000 + | HK$5.832 | HK$17,496.00 |
* 參考價格
- RS庫存編號:
- 200-6868
- 製造零件編號:
- SIHU6N80AE-GE3
- 製造商:
- Vishay
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 5A | |
| Maximum Drain Source Voltage Vds | 850V | |
| Series | E | |
| Package Type | TO-251 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 950mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 22.5nC | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 62.5W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 5A | ||
Maximum Drain Source Voltage Vds 850V | ||
Series E | ||
Package Type TO-251 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 950mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 22.5nC | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 62.5W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Vishay SIHU6N80AE-GE3 is a E series power MOSFET.
Low figure-of-merit
Low effective capacitance (Ciss)
Reduced switching and conduction losses
Ultra low gate charge (Qg)
Avalanche energy rated (UIS)
Integrated Zener diode ESD protection
相关链接
- Vishay E Type N-Channel MOSFET 850 V Enhancement, 3-Pin TO-251
- Vishay E Type N-Channel MOSFET 850 V Enhancement, 3-Pin TO-252 SIHD6N80AE-GE3
- Vishay E Type N-Channel MOSFET 850 V Enhancement, 3-Pin TO-220 SiHP6N80AE-GE3
- Vishay E Type N-Channel MOSFET 850 V Enhancement, 3-Pin TO-220 SiHA5N80AE-GE3
- Vishay E Type N-Channel MOSFET 850 V Enhancement, 3-Pin TO-247 SIHG21N80AEF-GE3
- Vishay E Type N-Channel MOSFET 850 V Enhancement, 3-Pin TO-252 SiHD5N80AE-GE3
- Vishay E Type N-Channel MOSFET 850 V Enhancement, 3-Pin TO-220 SIHP21N80AEF-GE3
- Vishay E Type N-Channel MOSFET 850 V Enhancement, 3-Pin TO-220 SiHP17N80AEF-GE3