N-Channel MOSFET, 204 A, 60 V, 8-Pin PowerPAK SO-8DC Vishay SiDR626LDP-T1-RE3
- RS庫存編號:
- 210-4957P
- 製造零件編號:
- SiDR626LDP-T1-RE3
- 製造商:
- Vishay
可供預購。
單價 个 (以每卷裝提供) 連續帶的數量低於 150
HK$19.268
單位 | 每單位 |
|---|---|
| 750 - 1495 | HK$19.268 |
| 1500 + | HK$18.968 |
- RS庫存編號:
- 210-4957P
- 製造零件編號:
- SiDR626LDP-T1-RE3
- 製造商:
- Vishay
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
The Vishay N-Channel 60 V (D-S) MOSFET has PowerPAK SO-8DC package type.
TrenchFET® Gen IV power MOSFET
Very low RDS - Qg figure-of-merit (FOM)
Tuned for the lowest RDS - Qoss FOM
100 % Rg and UIS tested
Top side cooling feature provides additional venue for thermal transfer
Very low RDS - Qg figure-of-merit (FOM)
Tuned for the lowest RDS - Qoss FOM
100 % Rg and UIS tested
Top side cooling feature provides additional venue for thermal transfer
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
規格
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 204 A |
| Maximum Drain Source Voltage | 60 V |
| Package Type | PowerPAK SO-8DC |
| Mounting Type | Surface Mount |
| Pin Count | 8 |
| Maximum Drain Source Resistance | 0.0012 Ω |
| Maximum Gate Threshold Voltage | 1 → 2.5V |
| Number of Elements per Chip | 1 |