製造零件編號

Infineon IMW1 Type N-Channel MOSFET, 36 A, 1200 V Enhancement, 3-Pin TO-247 IMW120R060M1HXKSA1

RS庫存編號:: 222-4856
製造零件編號:: IMW120R060M1HXKSA1
製造商:: Infineon

Infineon IMW1 Type N-Channel MOSFET, 36 A, 1200 V Enhancement, 3-Pin TO-247 IMW120R060M1HXKSA1

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小計（1 件）*

HK$64.30

訂單超過 HK$250.00 免費送貨

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1 - 9	HK$64.30
10 - 99	HK$63.20
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RS庫存編號:: 222-4856
製造零件編號:: IMW120R060M1HXKSA1
製造商:: Infineon

規格

產品概覽和技術數據資料表

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產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	36A
	Maximum Drain Source Voltage Vds	1200V
	Package Type	TO-247
	Series	IMW1
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	60mΩ
	Channel Mode	Enhancement
	Standards/Approvals	No
	Automotive Standard	No

	選取全部
	品牌 Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 36A
	Maximum Drain Source Voltage Vds 1200V
	Package Type TO-247
	Series IMW1
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 60mΩ
	Channel Mode Enhancement
	Standards/Approvals No
	Automotive Standard No

Datasheet - IMW120R060M1HXKSA1

The Infineon CoolSiC™ 1200 V, 60 mΩ SiC MOSFET in TO247-3 package build on a state-of-the-art trench semiconductor process optimized to combine performance with reliability. In comparison to traditional silicon (Si) based switches like IGBTs and MOSFETs, the SiC MOSFET offers a series of advantages.

Best in class switching and conduction losses

Benchmark high threshold voltage, Vth > 4 V

0V turn-off gate voltage for easy and simple gate drive

Wide gate-source voltage range

Robust and low loss body diode rated for hard commutation

Temperature independent turn-off switching losses

Infineon IMW1 Type N-Channel MOSFET, 36 A, 1200 V Enhancement, 3-Pin TO-247 IMW120R060M1HXKSA1

訂單超過 HK$250.00 免費送貨

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