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MOSFETs
Dual N-Channel MOSFET, 8.3 A, 100 V, 8-Pin SO-8 Vishay Si4056ADY-T1-GE3
RS庫存編號:
228-2819P
製造零件編號:
Si4056ADY-T1-GE3
製造商:
Vishay
查看所有MOSFETs
可供預購。
Add to Basket
單位
延期交貨
添加到收藏夾
單價 个 (以每卷裝提供) 連續帶的數量低於 150
HK$5.429
單位
每單位
50 - 90
HK$5.429
100 - 240
HK$5.331
250 - 990
HK$5.235
1000 +
HK$5.141
包裝方式:
標準包裝
行業包裝
RS庫存編號:
228-2819P
製造零件編號:
Si4056ADY-T1-GE3
製造商:
Vishay
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
規格
Datasheet - Si4056ADY-T1-GE3
相容
符合聲明
The Vishay TrenchFET Gen IV N-Channel power MOSFET is use for load switch, circuit protection and motor drive control.
Very low RDS x Qg figure-of-merit (FOM)
Tuned for the lowest RDS x Qoss FOM
Logic level gate drive
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
Attribute
Value
Channel Type
N
Maximum Continuous Drain Current
8.3 A
Maximum Drain Source Voltage
100 V
Package Type
SO-8
Series
TrenchFET
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
0.0292 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Number of Elements per Chip
2
Transistor Material
Si