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MOSFETs
Dual N-Channel MOSFET, 32 A, 650 V, 4-Pin PowerPAK 8 x 8 Vishay SiHH080N60E-T1-GE3
RS庫存編號:
228-2873P
製造零件編號:
SiHH080N60E-T1-GE3
製造商:
Vishay
產品概覽和技術數據資料表 (1)
查看所有MOSFETs
可供預購。
Add to Basket
單位
延期交貨
添加到收藏夾
單價 个 (以每卷裝提供) 連續帶的數量低於 150
HK$36.12
單位
每單位
50 - 98
HK$36.12
100 - 248
HK$35.035
250 - 998
HK$33.98
1000 +
HK$32.97
包裝方式:
標準包裝
行業包裝
RS庫存編號:
228-2873P
製造零件編號:
SiHH080N60E-T1-GE3
製造商:
Vishay
法例與合規
產品詳細資訊
規格
相容
符合聲明
The Vishay E Series Power MOSFET reduced switching and conduction losses.
Low figure-of-merit (FOM) Ron x Qg
Low effective capacitance (Co(er))
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
Attribute
Value
Channel Type
N
Maximum Continuous Drain Current
32 A
Maximum Drain Source Voltage
650 V
Series
E Series
Package Type
PowerPAK 8 x 8
Mounting Type
Surface Mount
Pin Count
4
Maximum Drain Source Resistance
0.08 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Transistor Material
Si
Number of Elements per Chip
2