Vishay E Type N-Channel MOSFET, 35 A, 650 V Enhancement, 3-Pin TO-220 SiHP080N60E-GE3

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包裝方式:
RS庫存編號:
228-2875
製造零件編號:
SiHP080N60E-GE3
製造商:
Vishay
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品牌

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

35A

Maximum Drain Source Voltage Vds

650V

Series

E

Package Type

TO-220

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

80mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.2V

Typical Gate Charge Qg @ Vgs

42nC

Maximum Power Dissipation Pd

227W

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

The Vishay E Series Power MOSFET reduced switching and conduction losses.

Low figure-of-merit (FOM) Ron x Qg

Low effective capacitance (Co(er))

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