Vishay E Type N-Channel MOSFET, 165.3 A, 850 V Enhancement, 3-Pin TO-220 SIHP21N80AEF-GE3

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小計(1 包,共 5 件)*

HK$129.80

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最後的 RS 庫存
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每單位
每包*
5 - 5HK$25.96HK$129.80
10 - 20HK$25.16HK$125.80
25 - 95HK$24.42HK$122.10
100 - 495HK$23.70HK$118.50
500 +HK$22.96HK$114.80

* 參考價格

包裝方式:
RS庫存編號:
228-2879
製造零件編號:
SIHP21N80AEF-GE3
製造商:
Vishay
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品牌

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

165.3A

Maximum Drain Source Voltage Vds

850V

Package Type

TO-220

Series

E

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

250mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

47nC

Forward Voltage Vf

1.2V

Maximum Power Dissipation Pd

179W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

The Vishay E Series Power MOSFET reduced switching and conduction losses.

Low figure-of-merit (FOM) Ron x Qg

Low effective capacitance (Co(er))

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