SiC N-Channel MOSFET, 55 A, 650 V, 4-Pin TO-247-4 onsemi NTH4L045N065SC1
- RS庫存編號:
- 229-6460P
- 製造零件編號:
- NTH4L045N065SC1
- 製造商:
- onsemi
56 現貨庫存，可於3工作日發貨。
已增加
單價 个 (以每管裝提供)
HK$91.05
| 單位 | Per unit |
| 10 - 49 | HK$91.05 |
| 50 - 99 | HK$88.23 |
| 100 - 224 | HK$86.36 |
| 225 + | HK$84.47 |
- RS庫存編號:
- 229-6460P
- 製造零件編號:
- NTH4L045N065SC1
- 製造商:
- onsemi
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
The ON Semiconductor SiC Power series MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge.
Highest efficiency
Faster operation frequency
Increased power density
Reduced EMI
Reduced system size
Faster operation frequency
Increased power density
Reduced EMI
Reduced system size
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
規格
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 55 A |
| Maximum Drain Source Voltage | 650 V |
| Package Type | TO-247-4 |
| Series | SiC Power |
| Mounting Type | Through Hole |
| Pin Count | 4 |
| Maximum Drain Source Resistance | 0.05 Ω |
| Maximum Gate Threshold Voltage | 4.3V |
| Transistor Material | SiC |
| Number of Elements per Chip | 1 |